Electrode structure and method of fabricating the same
AssigneeRenesas Technology Corp.
InventorAkira Matsumura
Life of this patent
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Abstract
A reliable electrode structure capable of ensuring a sufficient width for a second conductive layer is provided. The electrode structure comprises a first conductive layer having first side walls and containing at least either polycrystalline silicon or amorphous silicon, a second conductive layer, formed on the first conductive layer, having second side walls and containing a metal and silicon, and side wall oxide films formed to be in contact with the first side walls and the second side walls. The first conductive layer and the second conductive layer contain nitrogen in the vicinity of the first and second side walls. The nitrogen concentration in the second side walls is larger than the nitrogen concentration in the first side walls.
Claims13
An electrode structure comprising:
- a first conductive layer having a first side wall and containing at least either polycrystalline silicon or amorphous silicon;
- a second conductive layer, formed on said first conductive layer, having a second side wall and containing a metal and silicon;
- and
- a side wall oxide film formed to be in contact with said first side wall and said second side wall, wherein
- said first conductive layer and said second conductive layer contain nitrogen in the vicinity of said first and second side walls, and
- the nitrogen concentration in said second side wall is larger than the nitrogen concentration in said first side wall.
An electrode structure comprising:
- a first conductive layer formed on a semiconductor substrate having a first side wall and containing at least either polycrystalline silicon or amorphous silicon, wherein said first conductive layer has a portion reduced in width toward said semiconductor substrate;
- a second conductive layer, formed on said first conductive layer, having a second side wall and containing a metal and silicon;
- and
- a side wall oxide film formed to be in contact with said first side wall and said second side wall, wherein
- said first conductive layer and said second conductive layer contain nitrogen in the vicinity of said first and second side walls, and
- the nitrogen concentration in said second side wall is larger than the nitrogen concentration in said first side wall;
- and
- impurity regions formed on said semiconductor substrate on both sides of said first conductive layer.
Dependencies are inferred from the claim text.