Back to results
US 6,784,542 B2Granted
Semiconductor device having a ball grid array and a fabrication process thereof
AssigneeFujitsu Limited
InventorsNorio Fukasawa, Hirohisa Matsuki, Kenichi Nagashige, Yuzo Hamanaka, Muneharu Morioka
Life of this patent
Estimating the term…
Abstract
A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.
Claims10
A semiconductor device, comprising:
- a semiconductor chip having a top principal surface, said semiconductor chip carrying a plurality of bump electrodes on said top principal surface;
- a resin layer covering said top principal surface of said semiconductor chip so as to seal said semiconductor chip,
- said semiconductor chip and said resin layer thereby forming a composite semiconductor structure defined by a side wall having a plurality of corners, and
- a step surface formed in said resin layer along said side wall of said composite structure.
1 more element
Dependencies are inferred from the claim text.