Thermally enhanced semiconductor chip having integrated bonds over active circuits

A method for fabricating a semiconductor device including a semiconductor chip having first and second surfaces, comprising the steps of:

• forming an integrated circuit on said first chip surface, said circuit including active components, at least one metal layer, and a mechanically strong, electrically insulating protective overcoat;
• forming a plurality of vias through said overcoat to access said at least one metal layer;
• forming said vias by depositing a stack of metal films on said overcoat, said stack having at least one stress-absorbing film and an outermost film being non-corrodible and metallurgically attachable;
• patterning said films into a network of lines such that said lines are located substantially vertical over said active components and are suitable for heat dissipation;
• forming a plurality of windows in said overcoat to expose circuit contact pads;
• attaching electrical conductors operable to connect said lines to an outside source;
• attaching additional thermal-only conductors, distributed on said lines, operable to steepen the temperature gradient for thermal flux away from said active components and lines;
• and
• attaching electrical conductors to said circuit contact pads.