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US 6,784,524 B2Granted
Stress shield for microelectronic dice
AssigneeIntel Corporation
InventorQing Ma
Life of this patent
Estimating the term…
Abstract
A stress shield made of a material having a CTE similar to that of the material used in the fabrication of a microelectronic die, including but not limited silicon, molybdenum, and aluminum nitride, which abuts at least one corner and/or edge of the microelectronic die. When the stress shield is positioned to abut the microelectronic die corners and/or edges, the mechanical stresses on the microelectronic die are greatly reduced or substantially eliminated.
Claims9
A microelectronic package, comprising:
- a microelectronic die having an active surface and at least one side;
- and
- a stress shield abutting said microelectronic die only at said at least one microelectronic die side.
A microelectronic package, comprising:
- a microelectronic die having an active surface and at least one side;
- a stress shield abutting said microelectronic die only at least one side of said microelectronic die;
- and
- an encapsulating material abutting said stress shield, wherein a portion of said encapsulating material, a portion of said stress shield, and said microelectronic die active surface substantially share a common plane.
1 more element
Dependencies are inferred from the claim text.