Electronic semiconductor device having a thermal spreader
AssigneeSTMicroelectronics S.r.l.
InventorsBruno Murari, Ubaldo Mastromatteo, Benedetto Vigna
Life of this patent
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Abstract
The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
Claims30
An electronic device, comprising:
- a body of semiconductor material having a first and a second face;
- an electrical connection region formed on a periphery of said first face;
- a covering structure, covering said first face and including an upper face and a side face;
- an opening in said covering structure extending in portions of the upper and side faces, the opening being configured to receive a portion of a selected lead and positioned to expose a portion of the first face, including said electrical connection region, such that the portion of the selected lead is positionable within the opening to contact the electrical connection region;
- and
- a heat dissipation region, in direct contact with said second face.
An electronic device, comprising:
- a body of semiconductor material having first and second faces parallel to each other, and a third face transverse to the first and second faces;
- an electrical connection region formed on a periphery of said first face;
- a covering structure, covering said first face and having a fourth face coplanar with the third face and a fifth face substantially parallel to the first and second faces;
- an opening in said covering structure extending in portions of the fourth and fifth faces, the opening sized and positioned to expose a portion of the first face, including said electrical connection region, and configured to admit a lead extending from a direction transverse to the third face, to contact the electrical connection region;
- and
- a heat dissipation region, in direct contact with said second face.
An electronic device, comprising:
- a body of semiconductor material having first and second faces substantially opposite each other and a third face lying in a plane transverse to the first and second faces;
- an electrical connection region formed on a periphery of said first face;
- a covering structure, covering said first face;
- a metallic lead affixed to the connection region and intersecting the plane of the third face;
- an opening extending in portions of a side and a top face of the covering structure positioned over the connection region and configured to provide access thereto, for the metallic lead positioned therein;
- and
- a heat dissipation region, in direct contact with said second face.
A semiconductor device, comprising:
- a semiconductor material body having an upper face and a side face;
- an electronic component formed in the semiconductor material body;
- an electrical connection region formed on the upper face and in electrical contact with the electronic component;
- a covering structure formed on the upper face of the semiconductor material body and having upper and side faces, the upper face of the covering structure being approximately parallel to the upper face of the body and the side faces of the covering structure and body being coplanar with each other;
- and
- an opening in the covering structure, extending in portions of the upper and side faces thereof, the opening sized and positioned to expose the electrical connection region.
Dependencies are inferred from the claim text.