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US 6,784,516 B1Granted
Insulative cap for laser fusing
AssigneeInternational Business Machines Corporation
InventorsTimothy H. Daubenspeck, Thomas L. McDevitt, William T. Motsiff, Henry A. Nye, III
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Abstract
A semiconductor device having at least one fuse and an alignment mark formed therein. An etch resistant layer over the surface of the fuse and alignment mark, which provides a uniform passivation thickness for use in conjunction with laser fuse deletion processes.
Claims10
A semiconductor device comprising:
- a substrate;
- at least one fuse embedded within an interior portion of the substrate;
- a continuous etch resistant layer on an exterior surface of the substrate, wherein the etch resistant layer is directly over an entire surface of the at least one fuse, and wherein the etch resistant layer is in direct mechanical contact with the at least one fuse;
- and
- at least one insulative layer directly above the etch resistant layer, wherein the etch resistant layer has a slower etch rate than that of the at least one insulative layer thereabove.
2 more elements
Dependencies are inferred from the claim text.