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US 6,784,512 B2Granted
Photodiode and method of producing same
AssigneeSumitomo Electric Industries, Ltd.
InventorsAkira Yamaguchi, Yoshiki Kuhara, Takashi Sasaki
Life of this patent
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Abstract
A photodiode having a resin film painted upon an opening through which signal light goes in and a dielectric multilayered film piled upon the resin film for reflecting noise light. The elasticity of the resin film prevents the dielectric multilayered film from transforming or exfoliating by alleviating inner stress due to piling of tens to hundreds of different rigid dielectric layers.
Claims48
A photodiode comprising:
- a semiconductor substrate having a top surface and a bottom surface;
- a first conductive type light receiving layer being grown on the top surface of the substrate and having a first conductive type region;
- a second conductive type region made in the first conductive type light receiving layer;
- a pn-junction formed in the light receiving layer as an interface between the first conductive type region and the second conductive type region;
- and
- a wavelength selective filter including a stress-alleviating transparent resin film deposited on an aperture surface through which signal light of a wavelength λ2 goes in and a dielectric multilayered film deposited on the resin film for reflecting noise light of a wavelength λ1, the aperture surface being the bottom surface of the substrate or a top surface of the second conductive type region.
3 more elements
Dependencies are inferred from the claim text.