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US 6,784,507 B2Granted
Gate structure and method
AssigneeTexas Instruments Incorporated
InventorsRobert M. Wallace, Bruce E. Gnade
Life of this patent
Estimating the term…
Abstract
CMOS and BiCMOS structures with a silicate-germanate gate dielectric on SiGe PMOS areas and Si NMOS areas plus HBTs with Si—SiGe emitter-base junctions.
Claims5
An integrated circuit, comprising:
- (a) MOS devices with metal silicate germanate gate dielectric where said metal is taken from the group consisting of Hf, Zr, and mixtures thereof;
- and
- (b) interconnections among said devices.
Dependencies are inferred from the claim text.