Trench-gate semiconductor devices and the manufacture thereof
AssigneeKoninklijke Philips Electronics N.V.
InventorsEddie Huang, Miron Drobnis, Martin J. Hill, Raymond J. E. Hueting
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Abstract
A metal-oxide-semiconductor trench-gate semiconductor device in which a substantially intrinsic region (40) is provided below the gate trench (20), which extends from the base of the trench, substantially across the drain drift region (14) towards the drain contact region (14a), such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher. This reduces the switching losses of the device. The substantially intrinsic region (40) may, for example, be formed by implanting a region below the trench (20) with a damage implant.
Claims9
A trench-gate semiconductor device including:
- a semiconductor body comprising a source region and a drain region of a first conductivity type, having there between a channel-accommodating region of an opposite, second conductivity type, the drain region comprising a drain drift region and a drain contact region, with the drain drift region between the channel- accommodating region and the drain contact region, and the drain drift region being doped to a lesser degree than the drain contact region;
- and
- an insulated gate provided in a trench, the trench extending through the channel-accommodating region into the drain drift region, wherein the drain drift region has a region below the trench which is doped to a lesser degree than the rest of the drain drift region, the region below the trench extending from the bottom of the trench, substantially across the drain drift region to the drain contact region, such that when the drain-source voltage falls during turn-on of the device its rate of decrease is higher.
Dependencies are inferred from the claim text.