Thermally stable ferroelectric memory
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-bum Hong, Hyun-jung Shin
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Abstract
A thermally-stable ferroelectric memory is provided. The ferroelectric memory includes a lower electrode and a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit. The thickness of the ferroelectric layer is not greater than the size of the bit. Accordingly, a non-volatile ferroelectric memory which is thermally stable is provided, thereby realizing a reliable memory which can store information at high speed and high density and has improved memory retention.
Claims18
A ferroelectric memory comprising:
- a lower electrode;
- and
- a ferroelectric layer formed on the top surface of the lower electrode such that a domain having a dielectric polarization is set as a bit,
- wherein the thickness of the ferroelectric layer is not greater than a width of the bit.
A ferroelectric memory comprising:
- a planar electrode;
- and
- a planar ferroelectric layer formed on a surface of the planar electrode wherein data bits are recorded as domains in the planar ferroelectric layer, each domain having a dielectric polarization oriented in one of two opposite directions,
- wherein a thickness of the planar ferroelectric layer is less than or equal to a domain width, and
- wherein the domains are disposed adjacent to each other in a manner that allows reading the data bits with a probe tip.
Dependencies are inferred from the claim text.