Semiconductor device and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasakazu Nakabayashi
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Abstract
A semiconductor device capable of reducing manufacturing cost and on-state resistance is provided by selectively disposing a plurality of active regions (AR) on a main surface of a stainless steel substrate (1) and disposing a trench gate (7) so as to bury the area between the active regions (AR). The active regions (AR) have a multilayer structure that is made up of a drain layer (2) containing antimony (Sb) as an n-type impurity in a relatively high concentration (n+), a polysilicon layer (3) overlying the drain layer (2) and containing a p-type impurity, and a source layer (4) overlying the polysilicon layer (3) and containing an n-type impurity in a relatively high concentration (n+).
Claims8
A semiconductor device comprising:
- a metal substrate;
- plural active regions selectively disposed on a main surface of said metal substrate;
- and
- a conductor layer being disposed above said main surface of said metal substrate and making electrical connection with said plural active regions,
- said plural active regions being electrically independent from one another in a direction horizontal to said main surface of said metal substrate and using said conductor layer and said metal substrate as a main electrode, so that a main current flows in a direction perpendicular to said main surface of said metal substrate in each of said plural active regions.
Dependencies are inferred from the claim text.