Apparatus for monitoring intentional or unavoidable layer depositions and method

An apparatus for monitoring layer depositions in a process chamber, comprising:

• a light source being a separate light source generating a light beam;
• a disk-shaped sensor element subjectable to deposition and growth of a deposition layer;
• a light detector;
• said sensor element having a first surface on one side of said sensor element, a second surface on an opposite side of said sensor element, and a region extending from said first surface to said second surface, said region being configured for light to pass through and to absorb light to a significantly lesser extent than a remaining part of said sensor element, an intensity of the light being measured in dependence on said region being grown over by a thickness of the deposition layer, said light source being disposed in front of a window formed in the process chamber in a line with said sensor element and said detector.

An apparatus for monitoring layer depositions in a process chamber, comprising:

• a light source;
• a disk-shaped sensor element subjectable to deposition and growth of a deposition layer;
• a light detector;
• said sensor element having a first surface on one side of said sensor element, a second surface on an opposite side of said sensor element, and a region extending from said first surface to said second surface, said region being configured for light to pass through and to absorb light to a significantly lesser extent than a remaining part of said sensor element, an intensity of the light being measured in dependence on said region being grown over by a thickness of the deposition layer;
• and
• a tilting/rotating mechanism enabling said sensor element to be tilted/rotated out of a beam path of the light.

An apparatus for monitoring layer depositions in a process chamber, comprising:

• a light source being a separate light source generating a light beam;
• a disk-shaped sensor element subjectable to deposition and growth of a deposition layer;
• a light detector;
• said sensor element having a first surface on one side of said sensor element, a second surface on an opposite side of said sensor element, and a region extending from said first surface to said second surface, said region being configured for light to pass through and to absorb light to a significantly lesser extent than a remaining part of said sensor element, an intensity of the light being measured in dependence on said region being grown over by a thickness of the deposition layer;
• and
• a tilting/rotating mechanism enabling said sensor element to be tilted/rotated out of a beam path of said light beam from said light source to said detector.

An apparatus for monitoring layer depositions in a process chamber, comprising:

• a light source;
• a disk-shaped sensor element subjectable to deposition and growth of a deposition layer;
• a light detector;
• said sensor element having a first surface on one side of said sensor element, a second surface on an opposite side of said sensor element, and a region extending from said first surface to said second surface, said region being configured for light to pass through and to absorb light to a significantly lesser extent than a remaining part of said sensor element, an intensity of the light being measured in dependence on said region being grown over by a thickness of the deposition layer;
• and
• said region having a varying diameter.

An apparatus for monitoring layer depositions in a process chamber, comprising:

• a light source;
• a disk-shaped sensor element subjectable to deposition and growth of a deposition layer;
• a light detector;
• said sensor element having a first surface on one side of said sensor element, a second surface on an opposite side of said sensor element, and a region extending from said first surface to said second surface, said region being configured for light to pass through and to absorb light to a significantly lesser extent than a remaining part of said sensor element, an intensity of the light being measured in dependence on said region being grown over by a thickness of the deposition layer;
• and
• said region being a continuous opening formed in said sensor element, said opening extending from said first surface to said second surface and said opening having a varying diameter.