Critical doping in high-Tc superconductors for maximal flux pinning and critical currents
AssigneeIndustrial Research Limited
InventorJeffery Lewis Tallon
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Abstract
A method for maximising critical current density (Jc) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (Tc), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised1 at hole concentration p≈0.19. HTSC compounds are also claimed.
Claims26
A high temperature superconducting cuprate material (HTSC) having a doping state or hole concentration higher than the doping state or hole concentration of the material for maximum superconducting transition temperature (Tc) and at about a value where the normal-state pseudogap for the material reduces to a minimum and which maximises the critical current density (Jc) of the material.
A method for preparing a high temperature superconducting cuprate material (HTSC) to maximise the critical current density (Jc) thereof, comprising the step of controlling the doping state or hole concentration of the material to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (Tc) and to be at a value where normal-state pseudogap reduces to a minimum, to increase the critical current density of the material.
Dependencies are inferred from the claim text.