Insulation film on semiconductor substrate and method for forming same
AssigneeASM Japan K.K.
InventorsNobuo Matsuki, Yoshinori Morisada, Yasuyoshi Hyodo, Seijiro Umemoto
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Abstract
An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of −50° C.-100° C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.
Claims19
A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising the steps of:
- vaporizing a silicon-containing hydrocarbon compound to provide a source gas;
- introducing the source gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed;
- optionally introducing an additive gas selected from the group consisting of a carrier gas, an oxidizing gas, and a plasma stabilizing gas, said source gas and said additive gas constituting a reaction gas;
- and
- forming an insulation film on the semiconductor substrate by activating plasma polymerization reaction at a temperature of about −50° C. to about 100° C. in the reaction space, wherein the plasma polymerization reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦Rt,
- Rt[s]=9.42×107(Pr·Ts/Ps·Tr)rw2d/F
- wherein:
- Pr:
- reaction space pressure (Pa)
- Ps:
- standard atmospheric pressure (Pa)
- Tr:
- average temperature of the reaction (K)
- Ts:
- standard temperature (K)
- rw:
- radius of the silicon substrate (m)
- d:
- space between the silicon substrate and the upper electrode (m)
- F:
- total flow volume of the reaction gas (sccm).
A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising the steps of:
- vaporizing a silicon-containing hydrocarbon compound to provide a source gas;
- introducing the source gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed;
- introducing an additive gas selected from the group consisting of a carrier gas, an oxidizing gas, and a plasma stabilizing gas, said source gas and said additive gas constituting a reaction gas;
- forming an insulation film on the semiconductor substrate by activating plasma polymerization reaction at a temperature of about −50° C. to about 100° C. in the reaction space, wherein the plasma polymerization reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦Rt
- Rt[s]=9.42×107(Pr·Ts/Ps·Tr)rw2d/F
- wherein:
- Pr:
- reaction space pressure (Pa)
- Ps:
- standard atmospheric pressure (Pa)
- Tr:
- average temperature of the reaction (K)
- Ts:
- standard temperature (K)
- rw:
- radius of the silicon substrate (m)
- d:
- space between the silicon substrate and the upper electrode (m)
- F:
- total flow volume of the reaction gas (sccm);
- and
- annealing the insulation film at a temperature of about 300° C. to about 450° C. to remove moisture from the insulation film and increase its mechanical strength.
Dependencies are inferred from the claim text.