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US 6,784,122 B2Granted
Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
AssigneeMicron Technology, Inc.
InventorRavi Iyer
Life of this patent
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Abstract
A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3 comprises placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.
Claims14
A deposition method for a semiconductor wafer in a chemical vapor deposition chamber having a plasma generator comprising:
- flowing a gaseous mixture comprising TEOS and diatomic oxygen into the chemical vapor deposition chamber while generating a plasma in the chemical vapor deposition chamber for depositing a silicate glass base layer having an upper surface on the semiconductor wafer, the silicate glass base layer having carbon particle impurities on the upper surface thereof;
- subjecting the silicate glass base layer to a plasma ignited in a gaseous atmosphere in the chemical vapor deposition chamber containing a mixture of diatomic oxygen and a diamagnetic, oxygen-containing oxidant for a period sufficient to convert the carbon particle impurities to a carbon-containing gas for removal from the chemical vapor deposition chamber;
- and
- forming a final glass layer on the upper surface by flowing TEOS gas and ozone gas into the chemical vapor deposition chamber.
1 more element
A deposition method for depositing a TEOS silicate glass layer on a semiconductor wafer in a deposition chamber, comprising:
- flowing a gaseous mixture comprising at least TEOS and diatomic oxygen into the deposition chamber while generating a plasma in the deposition chamber for depositing a silicate glass base layer having an upper surface on the semiconductor wafer, the silicate glass base layer having carbon particle impurities on the upper surface thereof;
- subjecting the silicate base layer to a plasma ignited in a gaseous atmosphere in the deposition chamber containing a mixture of diatomic oxygen and a diamagnetic, oxygen-containing oxidant for a period sufficient to convert the carbon particle impurities to a carbon-containing gas for removal from the deposition chamber;
- and
- forming a final glass layer over the silicate glass base layer by effecting a chemical vapor deposition reaction between TEOS gas and ozone gas.
1 more element
Dependencies are inferred from the claim text.