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US 6,784,121 B1Granted
Integrated circuit dielectric and method
AssigneeTexas Instruments Incorporated
InventorsChangming Jin, Richard Scott List, Joseph D. Luttmer
Life of this patent
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Abstract
A xerogel aging system includes an aging chamber (190) with inlets and outlet and flows a gel catalyst in gas phase over a xerogel precursor film on a semiconductor wafer. Preferred embodiments use an ammonia and water vapor gas mixture catalyst.
Claims7
A dielectric layer fabrication method, comprising the steps of:
- (a) applying a layer of dielectric precursor on a body;
- (b) continuously flowing a precursor reaction catalyst over said layer;
- and
- (c) completing a precursor reaction to form a dielectric layer.
1 more element
Dependencies are inferred from the claim text.