Method for manufacturing a semiconductor device
AssigneeRenesas Technology Corp.
InventorTomoyuki Irizumi
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Abstract
In a method for manufacturing a semiconductor device having a USG film 5 formed on a semiconductor substrate 1 in which an N+-type active region 2 and a P+-type active region 3 are formed, an oxide film 4 is formed on the semiconductor substrate 1 and the USG film 5 is formed on the oxide film 4. Because the influence of the characteristic difference of an underlying layer on the formation of the USG film 5 can be avoided due to the existence of the oxide film, the USG film 5 can be formed in a uniform thickness over regions including the semiconductor substrate 1, the P+-type active region 3 and the N+-type active region 2.
Claims10
A method for manufacturing a semiconductor device wherein a USG film is formed on a semiconductor substrate that has an impurity region of a first conduction type and an impurity region of a second conduction type formed therein, said method comprising the steps of:
- forming an oxide film on a surface of said semiconductor substrate;
- and
- forming said USG film on said oxide film.
A method for manufacturing a semiconductor device wherein a USG film is formed on a semiconductor substrate that has an impurity region of a first conduction type and an impurity region of a second conduction type formed therein, where said USG film is formed by a chemical vapor deposition method at a pressure lower than about 30 Torr.
A method for manufacturing a semiconductor device wherein a USG film is formed on a semiconductor substrate that has an impurity region of a first conduction type and an impurity region of a second conduction type formed therein, wherein
- said USG film includes a first USG film and a second USG film formed on said first USG film wherein said first USG film is formed by a chemical vapor deposition method at a pressure lower than about 30 Torr, and said second USG film is formed by a chemical vapor deposition method at a pressure of about 100 Torr to about 600 Torr.
A method for manufacturing a semiconductor device wherein a USG film is formed on a semiconductor substrate that has an impurity region of a first conduction type and an impurity region of a second conduction type formed therein, said method comprising the steps of:
- forming, on said semiconductor substrate, an insulating film selected from the group consisting of a BSG film, a PSG film, and a BPSG film;
- and
- forming said USG film on said insulating film.
A method for manufacturing a semiconductor device wherein a USG film is formed on a semiconductor substrate that has an impurity region of a first conduction type and an impurity region of a second conduction type formed therein, wherein
- said USG film includes a first USG film and a second USG film formed on said first USG film wherein said first USG film is formed having a thickness sufficient to lose an underlying layer dependence of said second USG film, and said second USG film is formed having a thickness such that a total thickness of said first USG film and said second USG film is substantially equal to a desired thickness.
Dependencies are inferred from the claim text.