Method of simultaneously implementing differential gate oxide thickness using fluorine bearing impurities

A method of forming a semiconductor device comprising:

• providing a semiconductor substrate having a first semiconductor surface where a first oxide layer thickness is desired and a second semiconductor surface where a second oxide layer thickness is desired, wherein said first semiconductor surface is adjacent said second semiconductor surface;
• introducing halogen-containing impurities into said semiconductor substrate to form a higher halogen concentration in said semiconductor substrate below said first semiconductor surface than in said semiconductor substrate below said second semiconductor surface;
• performing an oxidizing process on said semiconductor substrate to simultaneously form said first oxide layer thickness disposed above said first semiconductor surface and said second oxide layer thickness disposed above said second semiconductor surface;
• and
• wherein introducing said halogen-containing impurities comprises introducing halogen-containing impurities into said semiconductor substrate below said first semiconductor surface at a first concentration and introducing halogen-containing impurities into said semiconductor substrate below said second semiconductor surface at a second concentration, said first concentration greater than said second concentration, both said first and second concentrations formed of a dosage of said halogen-containing impurities greater than about 1×1014 carriers/cm2 and less than about 1×1015 carriers/cm2.

A method of forming a semiconductor integrated circuit, said method comprising:

• providing a semiconductor substrate, said semiconductor substrate comprising a memory cell region, a first region for a MOS transistor, and a second region;
• forming a gate dielectric layer comprising an oxide overlying said semiconductor substrate including said first region and said second region;
• selectively implanting halogen-containing impurities through said gate dielectric layer and into said first region and said second region, such that said first region has a greater halogen concentration than said second region, said halogen-containing impurities in said second region formed of a dosage greater than about 1×1014 carriers/cm2 and less than about 1×1015 carriers/cm2;
• and
• simultaneously forming a first thickness of dielectric material overlying said first region and forming a second thickness of dielectric material overlying said second region by an oxidizing process, wherein said halogen-containing impurities in said second region promote formation of said second thickness of dielectric material.

A method of forming a semiconductor integrated circuit, said method comprising:

• providing a semiconductor substrate, said semiconductor substrate comprising a memory cell region, a first region for a MOS transistor, and a second region;
• forming a gate dielectric layer comprising an oxide overlying said semiconductor substrate including said first region and said second region;
• selectively implanting halogen-containing impurities through said gate dielectric layer and into said second region;
• simultaneously forming a first thickness of dielectric material overlying said first region and forming a second thickness of dielectric material overlying said second region by an oxidizing process, wherein said halogen-containing impurities in said second region promote formation of said second thickness of dielectric material;
• and
• forming a third thickness of dielectric material overlying a third region, said third region being spatially apart from said first region and said second region.

A method of forming a semiconductor device comprising:

• providing a semiconductor substrate having a first semiconductor surface area where a first oxide layer thickness is desired, a second semiconductor surface area where a second oxide layer thickness is desired, and a third semiconductor surface area where a third oxide layer thickness is desired, wherein said first and second semiconductor surface areas are contiguous;
• introducing a halogen-containing impurities into said semiconductor substrate to form a higher halogen concentration in a first volume of said semiconductor substrate below said first semiconductor surface area than in a second volume of said semiconductor substrate below said second semiconductor surface area, and a different halogen concentration in a third volume of said semiconductor substrate below said third semiconductor surface area than in said first volume and said second volume, each of said higher halogen concentration and said different halogen concentration;
• and
• performing an oxidizing process on said semiconductor substrate to simultaneously form said first oxide layer thickness at said first semiconductor surface area and said second oxide layer thickness at said second semiconductor surface area.

A method of forming a semiconductor device, the method comprising:

• providing a substrate having a first region and a second region and a third region;
• introducing halogen-containing impurities into the substrate to form a higher concentration in the first region than in the second region;
• placing the substrate in an oxidizing environment, wherein a thicker oxide layer forms over the first region where the halogen-containing impurities are located than over the second region or over the third region, the third region oxide layer thickness being different from the first and second region thicknesses;
• in a single step, forming a conductive layer disposed above the first region and the second region;
• and
• removing portions of the oxide layer and the conductive layer to form gate structures disposed over the substrate.