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US 6,784,114 B1Granted
Monatomic layer passivation of semiconductor surfaces
AssigneeBoard of Regents, The University of Texas System
InventorsMeng Tao, Wiley P. Kirk
Life of this patent
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Abstract
The present invention relates generally to a method of improving the performance of solid state devices, and specifically provides methods for passivating a semiconductor surfaces with a monolayer of passivating material.
Claims51
A method for passivating a semiconductor surface with a monolayer of passivating agent comprising the steps of:
- placing a semiconductor substrate having at least one surface in a chamber;
- heating the semiconductor substrate to a temperature;
- and
- exposing the semiconductor substrate to a passivating agent for a period of time sufficient to react with substantially all of the surface, wherein the partial pressure of the passivating agent is such that the passivating agent will not condense at the temperature of the substrate, and the existence of surface states substantially eliminated.
1 more element
A method for manufacture of a semiconductor device with a low Schottky barrier comprising the steps of:
- placing a n-type semiconductor substrate having at least one surface in a chamber;
- heating the semiconductor substrate to a temperature;
- exposing the semiconductor substrate to a passivating agent for a period of time sufficient to react with substantially all of the surface, wherein the partial pressure of the passivating agent is such that the passivating agent will not condense at the temperature of the substrate, and the existence of surface states is substantially eliminated;
- and
- metallizing a portion of the semiconductor surface with a metal having a work function whose magnitude is greater than the magnitude of the electron affinity of the semiconductor substrate.
2 more elements
A method for manufacture of a semiconductor device with a low Schottky barrier comprising the steps of:
- placing a p-type semiconductor substrate having at least one surface in a chamber;
- heating the semiconductor substrate to a temperature;
- exposing the semiconductor substrate to a passivating agent for a period of time sufficient to react with substantially all of the surface, wherein the partial pressure of the passivating agent is such that the passivating agent will not condense at the temperature of the substrate, and the existence of surface states is substantially eliminated;
- and
- metallizing a portion of the semiconductor surface with a metal having a work function whose magnitude is less than the sum of the magnitude of the electron affinity and the band gap of the p-type semiconductor substrate.
2 more elements
A method for manufacture of a semiconductor device with improved ohmic contacts comprising the steps of:
- placing an n-type semiconductor substrate having at least one surface in a chamber;
- heating the semiconductor substrate to a temperature;
- exposing the semiconductor substrate to a passivating agent for a period of time sufficient to react with substantially all of the surface, wherein the partial pressure of the passivating agent is such that the passivating agent will not condense at the temperature of the substrate, and the presence of dangling bonds and dimer bonds on the surface is substantially eliminated;
- and
- metallizing a portion of the semiconductor surface with a metal having a work function whose magnitude is less than the magnitude of the electron affinity of the n-type semiconductor substrate.
2 more elements
A method for manufacture of a semiconductor device with improved ohmic contacts comprising the steps of:
- placing an p-type semiconductor substrate having at least one surface in a chamber;
- heating the semiconductor substrate to a temperature;
- exposing the semiconductor substrate to a passivating agent for a period of time sufficient to react with substantially all of the surface, wherein the partial pressure of the passivating agent is such that the passivating agent will not condense at the temperature of the substrate, and the presence of dangling bonds and dimer bonds on the surface is substantially eliminated;
- and
- metallizing a portion of the semiconductor surface with a metal having a work function whose magnitude is greater than the sum of the magnitude of the electron affinity and the band gap of the p-type semiconductor substrate.
2 more elements
A method for forming a semiconductor device comprising the steps of:
- placing a semiconductor substrate having at least one surface in a chamber;
- heating the semiconductor substrate to a temperature;
- exposing the semiconductor substrate to a passivating agent for a period of time sufficient to react with substantially all of the surface, wherein the partial pressure of the passivating agent is such that the passivating agent will not condense at the temperature of the substrate, and the existence of surface states substantially eliminated;
- and
- metallizing a portion of the semiconductor surface.
2 more elements
Dependencies are inferred from the claim text.