Capacitor with oxidation barrier layer and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsHoon-Jung Oh, Kyong-Min Kim, Jong-Bum Park
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Abstract
This invention provides a capacitor and a method for manufacturing of the same, which are adaptable to preventing a lower electrode from being oxidized at a following thermal process. The capacitor includes: a lower electrode; an oxidation barrier layer formed on the lower electrode, wherein the oxidation barrier layer is formed of at least double nitridation layers; a dielectric layer formed on the oxidation barrier layer; and an upper electrode formed on the dielectric layer.
Claims17
A capacitor comprising:
- a lower electrode;
- an oxidation barrier layer formed on the lower electrode, wherein the oxidation barrier layer includes:
- a first nitridation layer formed on the lower electrode;
- and
- a second nitride layer formed on the first nitridation layer;
- a dielectric layer formed on the oxidation barrier layer;
- and
- an upper electrode formed on the dielectric layer.
A semiconductor device comprising:
- a semiconductor substrate;
- an intermediate insulating layer formed on the semiconductor substrate;
- a plug connected to the semiconductor substrate through the intermediate insulating layer;
- a lower electrode formed on the plug;
- an oxidation barrier layer covering the lower electrode and the intermediate insulating layer, wherein the oxidation barrier layer includes:
- a first nitridation layer formed on the lower electrode;
- and
- a second nitride layer formed on the first nitridation layer;
- a dielectric layer formed on the oxidation barrier layer;
- and
- an upper electrode formed on the dielectric layer.
A method for manufacturing a capacitor, the method comprising the steps of:
- a) forming a lower electrode;
- b) forming a first nitridation layer on the lower electrode;
- c) forming a second nitride layer on the first nitridation layer;
- d) forming a dielectric layer on the second nitride layer;
- e) performing a thermal process so as to secure a dielectric characteristic of the dielectric layer;
- and
- f) forming an upper electrode on the dielectric layer.
A semiconductor device comprising:
- a semiconductor substrate;
- an intermediate insulating layer formed on the semiconductor substrate;
- a plug connected to the semiconductor substrate through the intermediate insulating layer;
- a lower electrode formed on the plug;
- a first nitridation layer formed on the lower electrode;
- an oxynitride layer formed on the first nitridation layer;
- a second nitride layer formed on the oxynitride layer;
- a dielectric layer formed on the second nitride layer layer;
- and
- an upper electrode formed on the dielectric layer.
Dependencies are inferred from the claim text.