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US 6,784,093 B1Granted
Copper surface passivation during semiconductor manufacturing
AssigneeTexas Instruments Incorporated
InventorsJiong-Ping Lu, Changfeng Xia
Life of this patent
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Abstract
An embodiment of the invention is a method to reduce the corrosion of copper interconnects 90 by forming a thiol ligand coating 130 on the surface of the copper interconnects 90.
Claims30
A method of manufacturing a copper interconnects on a semiconductor wafer comprising:
- polishing a copper interconnect layer to form said copper interconnects, said polishing step including the use of a slurry that contains BTA;
- cleaning said semiconductor wafer;
- exposing said semiconductor wafer to a H—S—S solution to form a S—R layer over said copper interconnects;
- and
- depositing a layer of dielectric material over said semiconductor wafer after removing said S—R layer with an in-situ plasma pretreatment of said semiconductor wafer with a hydrogen containing plasma.
2 more elements
A method of manufacturing copper interconnects on a semiconductor wafer comprising:
- forming a S—R layer over said copper interconnects by polishing a copper interconnect layer with a slurry that includes H—S—S;
- cleaning said semiconductor wafer:
- exposing said semiconductor wafer to a H—S—S solution;
- and
- depositing a layer of dielectric material over said semiconductor wafer after removing said S—R layer with an in-situ plasma pretreatment of said semiconductor wafer with a hydrogen containing plasma.
2 more elements
A method of manufacturing copper interconnects on a semiconductor wafer comprising:
- forming said copper interconnects by polishing a copper interconnect layer with a slurry that includes H—S—S, said polishing step also forming a S—R layer over said copper interconnects;
- cleaning said semiconductor wafer;
- and
- depositing a layer of dielectric material over said semiconductor wafer after removing said S—R layer with an in-situ plasma pretreatment of said semiconductor wafer with a hydrogen containing plasma.
1 more element
The method of manufacturing a copper interconnects on a semiconductor wafer comprising:
- forming said copper interconnects by polishing a copper interconnect layer with a slurry that includes HSC16H33, said polishing step also forming a S—R monolayer over said copper interconnects;
- cleaning said semiconductor wafer;
- dipping said semiconductor wafer in a solution containing HSC16H33, said dipping step performed in-situ with said cleaning step;
- and
- depositing a layer of dielectric material over said semiconductor wafer after removing said S—R monolayer with an in-situ plasma pretreatment of said semiconductor wafer with a NH3 plasma.
2 more elements
Dependencies are inferred from the claim text.