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US 6,784,092 B2Granted
Method of forming insulating film and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHideshi Miyajima, Miyoko Shimada, Rempei Nakata
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Abstract
Disclosed is a method for forming an insulating layer, including coating a substrate with an insulating film material to form a coated film, the insulating film material containing at least first and second polymers differing from each other in average molecular weight, and heating the coated film while irradiating the coated film with an electron beam.
Claims21
A method for forming an insulating layer, comprising:
- coating a substrate with an insulating film material to form a coated film, said insulating film material containing at least first and second polymers differing from each other in average molecular weight, said first polymer having an average molecular weight at least 100 times as high as that of said second polymer;
- and
- heating said coated film while irradiating said coated film with an electron beam.
A method for manufacturing a semiconductor device, comprising:
- coating a semiconductor substrate having an element formed therein with an insulating film material to form a coated film, said insulating film material containing at least first and second polymers differing from each other in average molecular weight, said first polymer having an average molecular weight at least 100 times as high as that of said second polymer;
- and
- heating said coated film while irradiating said coated film with an electron beam to form an insulating film having a low dielectric constant.
Dependencies are inferred from the claim text.