Method of manufacturing semiconductor device by sputter doping

A method of manufacturing a semiconductor device, comprising the steps of:

• electrically isolating a diode formation region on a semiconductor substrate by an element isolation layer;
• holding, in a vacuum chamber, said semiconductor substrate at which said element isolation layer is formed and an impurity solid including impurity to be introduced into said diode formation region;
• introducing inert or reactive gas into said vacuum chamber, while said impurity solid and said semiconductor substrate are in a state where no voltage is being applied thereto, to generate plasma composed of said inert or reactive gas;
• while maintaining said semiconductor substrate in a state where no voltage is being applied thereto, applying to said impurity solid first voltage which allows said impurity solid to serve as a cathode for said plasma, performing sputtering of said impurity solid by ions in said plasma, and thereby mixing said impurity in said impurity solid into said plasma;
• after resuming said impurity solid back to a state where no voltage is being applied thereto, applying to said semiconductor substrate held in said vacuum chamber a second voltage which allows said semiconductor substrate to serve as an anode for said plasma to cause a potential difference between said plasma and said semiconductor substrate so that said impurity mixed into said plasma is introduced directly to a surface portion of said diode formation region at said semiconductor substrate to form an impurity layer;
• and
• forming, on said semiconductor substrate at which said impurity layer is formed, an interconnection layer electrically connected to said impurity layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• electrically isolating a diode formation region on a semiconductor substrate by an element isolation layer;
• holding, in a vacuum chamber, said semiconductor substrate at which said element isolation layer is formed and an impurity solid including impurity to be introduced into said diode formation region;
• introducing inert or reactive gas into said vacuum chamber, while said impurity solid and said semiconductor substrate are in a state where no voltage is being applied thereto, to generate plasma composed of said inert or reactive gas;
• while maintaining said semiconductor substrate in a state where no voltage is being applied thereto, applying to said impurity solid first voltage which allows said impurity solid to serve as an anode for said plasma, performing sputtering of said impurity solid by ions in said plasma, and thereby mixing said impurity in said impurity solid into said plasma;
• after resuming said impurity solid back to a state where no voltage is being applied thereto, applying to said semiconductor substrate held in said vacuum chamber a second voltage which allows said semiconductor substrate to serve as an anode for said plasma to cause a potential difference between said plasma and said semiconductor substrate so that said impurity mixed into said plasma is introduced directly to a surface portion of said diode formation region at said semiconductor substrate to form an impurity layer;
• and
• forming, on said semiconductor substrate at which said impurity layer is formed, an interconnection layer electrically connected to said impurity layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• electrically isolating a transistor formation region on a semiconductor substrate by an element isolation layer;
• forming an electrode at said transistor formation region on said semiconductor substrate at which said element isolation layer is formed, with an insulating layer interposed therebetween;
• holding, in a vacuum chamber, said semiconductor substrate at which said electrode is formed and an impurity solid including impurity to be introduced into said transistor formation region;
• introducing inert or reactive gas into said vacuum chamber, while said impurity solid and said semiconductor substrate are in a state where no voltage is being applied thereto, to generate plasma composed of said inert or reactive gas;
• while maintaining said semiconductor substrate in a state where no voltage is being applied thereto, applying to said impurity solid first voltage which allows said impurity solid to serve as a cathode for said plasma, performing sputtering of said impurity solid by ions in said plasma, and thereby mixing said impurity in said impurity solid into said plasma;
• after resuming said impurity solid back to a state where no voltage is being applied thereto, applying to said semiconductor substrate held in said vacuum chamber a second voltage which allows said semiconductor substrate to serve as a cathode for said plasma to cause a potential difference between said plasma and said semiconductor substrate so that said impurity mixed into said plasma is introduced directly to a surface portion of said transistor formation region at said semiconductor substrate to form an impurity layer;
• and
• forming, on said semiconductor substrate at which said impurity layer is formed, an interconnection layer electrically connected to said impurity layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• electrically isolating a transistor formation region on a semiconductor substrate by an element isolation layer;
• forming an electrode at said transistor formation region on said semiconductor substrate at which said element isolation layer is formed, with an insulating layer interposed therebetween;
• holding, in a vacuum chamber, said semiconductor substrate at which said electrode is formed and an impurity solid including impurity to be introduced into said transistor formation region;
• introducing inert or reactive gas into said vacuum chamber, while said impurity solid and said semiconductor substrate are in a state where no voltage is being applied thereto, to generate plasma composed of said inert or reactive gas;
• while maintaining said semiconductor substrate in a state where no voltage is being applied thereto, applying to said impurity solid first voltage which allows said impurity solid to serve as a cathode for said plasma, performing sputtering of said impurity solid by ions in said plasma, and thereby mixing said impurity in said impurity solid into said plasma;
• after resuming said impurity solid back to a state where no voltage is being applied thereto, applying to said semiconductor substrate held in said vacuum chamber a second voltage which allows said semiconductor substrate to serve as an anode for said plasma to cause a potential difference between said plasma and said semiconductor substrate so that said impurity mixed into said plasma is introduced directly to a surface portion of said transistor formation region at said semiconductor substrate to form an impurity layer;
• and
• forming, on said semiconductor substrate at which said impurity layer is formed, an interconnection layer electrically connected to said impurity layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• electrically isolating a transistor formation region on a semiconductor substrate by an element isolation layer;
• forming an electrode at said transistor formation region on said semiconductor substrate at which said element isolation layer is formed, with an insulating layer interposed therebetween;
• holding, in a vacuum chamber, said semiconductor substrate at which said electrode is formed and an impurity solid including impurity to be introduced into said transistor formation region;
• introducing inert or reactive gas into said vacuum chamber, while said impurity solid and said semiconductor substrate are in a state where no voltage is being applied thereto, to generate plasma composed of said inert or reactive gas;
• while maintaining said semiconductor substrate in a state where no voltage is being applied thereto, applying to said impurity solid first voltage which allows said impurity solid to serve as an anode for said plasma, performing sputtering of said impurity solid by ions in said plasma, and thereby mixing said impurity in said impurity solid into said plasma;
• after resuming said impurity solid back to a state where no voltage is being applied thereto, applying to said semiconductor substrate held in said vacuum chamber a second voltage which allows said semiconductor substrate to serve as an anode for said plasma to cause a potential difference between said plasma and said semiconductor substrate so that said impurity mixed into said plasma is introduced directly to a surface portion of said transistor formation region at said semiconductor substrate to form an impurity layer;
• and
• forming, on said semiconductor substrate at which said impurity layer is formed, an interconnection layer electrically connected to said impurity layer.