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US 6,784,079 B2Granted
Method of manufacturing silicon
AssigneeTokuyama Corporation
InventorsSatoru Wakamatsu, Hiroyuki Oda
Life of this patent
Estimating the term…
Abstract
A production method of silicon which comprises the steps of bringing a silane into contact with a surface of a substrate so as to cause silicon to be deposited while the surface of the substrate is heated to and kept at a temperature lower than the melting point of the silicon, and raising the temperature of the surface of the substrate so as to cause a portion or all of the deposited silicon to melt and drop from the surface of the substrate and be recovered.
Claims2
A method for producing silicon, which comprises the steps of:
- bringing a silane into contact with a surface of a substrate so as to deposit silicon on said surface while the surface of the substrate is heated to and kept at a temperature lower than the melting point of the silicon, and
- raising the temperature of the surface of the substrate so as to melt a portion or all of the deposited silicon and to drop the melted silicon from the surface of the substrate and to recover it.
Dependencies are inferred from the claim text.