Flash memory cell process using a hardmask

A method to form a self-aligned source in a memory cell, comprising:

• providing a semiconductor substrate with a memory structure comprising a first dielectric layer, a first polysilicon layer on said dielectric layer, an inter-polysilicon dielectric layer on said first polysilicon layer, a second polysilicon layer on said inter-polysilicon dielectric layer, and a hardmask layer on said second polysilicon layer;
• performing a self-aligned source etch process;
• forming a cap layer on said memory structure;
• performing an anisotropic cap layer etch to form sidewall structures on said memory structure;
• and
• removing said hardmask layer using a hardmask etch process.