Method of forming a capacitor with two diffusion barrier layers formed in the same step
AssigneeMicron Technology, Inc.
InventorsKlaus Florian Schuegraf, Randhir P. S. Thakur
Life of this patent
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Abstract
The invention includes: forming a capacitor electrode over one region of a substrate; forming a capacitor dielectric layer proximate the electrode; forming a conductive diffusion barrier layer, the conductive diffusion barrier layer being between the electrode and the capacitor dielectric layer; forming a conductive plug over another region of the substrate, the conductive plug comprising a same material as the conductive diffusion barrier layer; and at least a portion of the conductive plug being formed simultaneously with the conductive diffusion barrier layer.
Claims15
A method of forming circuitry comprising the following steps:
- providing a substrate, the substrate including a semiconductor material;
- defining a memory array region of the substrate and an other region of the substrate soaced from the memory array region;
- said other region comprising a conductively-doped region of the semiconductor material;
- forming a capacitor construction over the memory array region of the substrate, the capacitor construction comprising a pair of capacitor electrodes spaced from one another by at least a dielectric layer and a first barrier layer;
- forming an electrical interconnect over said other region of the substrate and in electrical connection with the conductively-doped region the electrical interconnect comprising a second barrier layer the conductively-doped region and a metal layer over the second barrier layer;
- and
- wherein the first and second barrier layers are formed in a same step.
A method of forming circuitry, comprising:
- providing a substrate which comprises a semiconductive material;
- defining a memory array region of the substrate and an other region of the substrate spaced from the memory array region;
- providing a first electrical node associated with the memory array region of the substrate, and providing a second electrical node associated with said other region of the substrate;
- forming a first capacitor electrode in electrical connection with the first electrical node;
- in a common deposition step, forming a conductive material over the first capacitor electrode and in electrical connection with the second electrical node;
- and
- forming a capacitor dielectric layer and a second capacitor electrode ever the first capacitor electrode to form a capacitor construction comprising the capacitor dielectric layer and the first and second capacitor electrodes, one of the first and second capacitor electrodes comprising the conductive material.
Dependencies are inferred from the claim text.