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US 6,784,049 B2Granted
Method for forming refractory metal oxide layers with tetramethyldisiloxane
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming (and apparatus for forming) refractory metal oxide layers, such as tantalum pentoxide layers, on substrates by using vapor deposition processes with refractory metal precursor compounds and ethers.
Claims43
A method of forming a layer on a substrate, the method comprising:
- providing a substrate;
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more ethers of the formula R1—O—R2, wherein R1 and R2 are each independently organic groups, and with the proviso that at least one of the one or more ethers comprises tetramethyldisiloxane;
- and
- directing the vapors comprising the one or more refractory metal precursor compounds and the one or more ethers to the substrate to form a refractory metal oxide layer on one or more surfaces of the substrate.
2 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more ethers of the formula R1—O—R2, wherein R1 and R2 are each independently organic groups, and with the proviso that at least one of the one or more ethers comprises tetramethyldisiloxane;
- and
- directing the vapors comprising the one or more refractory metal precursor compounds and the one or more ethers to the semiconductor substrate or substrate assembly to form a refractory metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly.
2 more elements
A method of manufacturing a memory device, the method comprising:
- providing a substrate having a first electrode thereon;
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I) wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more ethers of the formula R1—O—R2, wherein R1 and R2 are each independently organic groups, and with the proviso that at least one of the one or more ethers comprises tetramethyldisiloxane;
- directing the vapors comprising the one or more refractory metal precursor compounds and the one or more ethers to the substrate to form a refractory metal oxide dielectric layer on the first electrode of the substrate;
- and
- forming a second electrode on the dielectric layer.
3 more elements
Dependencies are inferred from the claim text.