Method of making vertical diode structures

A method for forming a diode on a silicon wafer, the silicon wafer having an exposed surface and being doped with a first type dopant, the method comprising:

• highly doping a portion of the exposed surface of the silicon wafer with a second type dopant to form an active region;
• disposing a first refractory metal suicide layer over said active region;
• forming a layer of insulation material over said first refractory metal suicide layer;
• etching a diode opening through said layer of insulation material to expose a portion of said first refractory metal suicide layer, wherein said diode opening has an interior surface;
• disposing a second refractory metal suicide layer over said interior surface of said diode opening;
• filling said diode opening with amorphous silicon;
• lightly doping said amorphous silicon with said second type of dopant;
• heating said amorphous silicon to convert said amorphous silicon to large grain polysilicon;
• applying a platinum silicide layer to said silicon plug so as to not contact said second refractory metal suicide layer;
• positioning an insulative silicon layer on said layer of insulation material and over said diode opening;
• etching a passageway through said insulative silicon layer and down to said platinum silicide layer;
• placing a layer of chalcogenide material over said insulative silicon layer and within said passageway so as to contact said platinum suicide layer;
• locating a layer of titanium nitride over said chalcogenide material;
• and
• securing a metal contact onto said layer of titanium nitride.