Integration process on a SOI substrate of a semiconductor device comprising at least a dielectrically isolated well

An integration process for semiconductor devices having a dielectrically insulated well in connection with an SOI substrate, comprising:

• forming an oxide layer on the SOI substrate;
• forming a nitride layer on the oxide layer;
• forming a mask using a resist layer directly on the nitride layer to define photolithographic openings for forming at least one dielectric trench;
• etching the nitride layer and the oxide layer through the photolithographic openings with the nitride layer used as a hard mask;
• and
• forming at least one dielectric trench, comprising etching the SOI substrate to form the at least one dielectric trench with sidewalls;
• and oxidizing the sidewalls of the at least one dielectric trench;
• filling the at least one dielectric trench with a filling material and doping the filling material, the step of doping carried out during a step of implanting at least one implanted layer needed to form components to be integrated in the well;
• and
• coating the surface of the semiconductor device with a protective resist layer and back etching the back of the semiconductor device.

An integration process in a SOI substrate of a semiconductor device including at least a dielectrically insulated well, the process comprising:

• an oxidizing step directed to form an oxide layer;
• a depositing step of a nitride layer onto said oxide layer;
• and
• a masking step, carried out onto said nitride layer using a resist layer and directed to define photolithographic openings for forming at least one dielectric trench effective to provide side insulation for said well;
• an etching step of said nitride layer and said oxide layer, as masked by said resist layer, said nitride layer used as a hardmask;
• a step of forming said at least one dielectric trench and comprising at least one etching step of said substrate, an oxidizing step of at least sidewalls of said at least one dielectric trench, and a filling step of said at least one trench with a filling material and doping the filling material, the step of doping carried out during a step of implanting at least one implanted layer needed to form components to be integrated in the well;
• and
• a step of forming active areas for components to be integrated in said well, being carried out after said step of forming said at least one dielectric trench.

An integration process in a SOI substrate of a semiconductor device including at least a dielectrically insulated well, the process comprising:

• an oxidizing step directed to form an oxide layer;
• a depositing step of a nitride layer onto said oxide layer;
• and
• a masking step, carried out onto said nitride layer using a resist layer and directed to define photolithographic openings for forming at least one dielectric trench effective to provide side insulation for said well;
• an etching step of said nitride layer and said oxide layer, as masked by said resist layer, said nitride layer used as a hardmask;
• a step of forming said at least one dielectric trench and comprising at least one etching step of said substrate, an oxidizing step of at least sidewalls of said at least one dielectric trench, and a filling step of said at least one trench with a filling material;
• and
• a step of forming active areas for components to be integrated in said well, being carried out after said step of forming said at least one dielectric trench, the active area forming step further comprising at least one step of depositing an additional nitride layer and a step of photomasking and etching the additional nitride layer at locations of field regions and not removing the additional nitride layer from the at least one trench to establish a contact with the filling material.

An integration process in a SOI substrate of a semiconductor device including at least a dielectrically insulated well, the process comprising:

• an oxidizing step directed to form an oxide layer;
• a depositing step of a nitride layer onto said oxide layer;
• and
• a masking step, carried out onto said nitride layer using a resist layer and directed to define photolithographic openings for forming at least one dielectric trench effective to provide side insulation for said well;
• an etching step of said nitride layer and said oxide layer, as masked by said resist layer, said nitride layer used as a hardmask;
• a step of forming said at least one dielectric trench and comprising at least one etching step of said substrate, an oxidizing step of at least sidewalls of said at least one dielectric trench, and a filling step of said at least one trench with a filling material;
• and
• a step of forming active areas for components to be integrated in said well, being carried out after said step of forming said at least one dielectric trench, the acting area forming step comprising at least one step of depositing an additional nitride layer and a step of photomasking and etching the additional nitride layer at locations of field regions, and an oxidizing step effective to form a field oxide layer over the field regions and a second plurality of bird's beak structures at the edges of the field regions where the additional nitride layer is discontinued, the oxidizing step preceded by a step of integrating a portion of doped layer effective to oppose formation, from the oxidizing step, of interspace surface junctions in the neighborhood of the field regions.

An integration process in a SOI substrate of a semiconductor device including at least a dielectrically insulated well, the process comprising:

• an oxidizing step directed to form an oxide layer;
• a depositing step of a nitride layer onto said oxide layer, and
• a masking step, carried out onto said nitride layer using a resist layer and directed to define photolithographic openings for forming at least one dielectric trench effective to provide side insulation for said well;
• an etching step of said nitride layer and said oxide layer, as masked by said resist layer, said nitride layer used as a hardmask;
• a step of forming said at least one dielectric trench and comprising at least one etching step of said substrate, an oxidizing step of at least sidewalls of said at least one dielectric trench, and a filling step of said at least one trench with a filling material;
• and
• a step of forming active areas for components to be integrated in said well, being carried out after said step of forming said at least one dielectric trench, the nitride layer used for said active area forming comprising at least one step of photomasking and etching said nitride layer away from sinker regions.

An integration process in a SOI substrate of a semiconductor device including at least a dielectrically insulated well, the process comprising:

• an oxidizing step directed to form an oxide layer;
• a depositing step of a nitride layer onto said oxide layer;
• and
• a masking step, carried out onto said nitride layer using a resist layer and directed to define photolithographic openings for forming at least one dielectric trench effective to provide side insulation for said well;
• an etching step of said nitride layer and said oxide layer, as masked by said resist layer, said nitride layer used as a hardmask;
• a step of forming said at least one dielectric trench and comprising at least one etching step of said substrate, an oxidizing step of at least sidewalls of said at least one dielectric trench, and a filling step of said at least one trench with a filling material;
• forming sinker layers comprising at least one step of masking said nitride layer in order to define openings at the locations of said sinker layers, followed by an implanting step;
• and
• a step of forming active areas for components to be integrated in said well, being carried out after said step of forming said at least one dielectric trench.

An integration process in a SOI substrate of a semiconductor device including at least a dielectrically insulated well, the process comprising:

• an oxidizing step directed to form an oxide layer;
• a depositing step of a nitride layer onto said oxide layer;
• and
• a masking step, carried out onto said nitride layer using a resist layer and directed to define photolithographic openings for forming at least one dielectric trench effective to provide side insulation for said well;
• an etching step of said nitride layer and said oxide layer, as masked by said resist layer, said nitride layer used as a hardmask;
• a step of forming said at least one dielectric trench and comprising at least one etching step of said substrate, an oxidizing step of at least sidewalls of said at least one dielectric trench, removing a thick oxide layer from said at least one dielectric trench, and a filling step of said at least one trench with a filling material;
• forming sinker layers comprising at least one step of masking said nitride layer in order to define openings at the locations of said sinker layers, followed by an implanting step;
• and
• a step of forming active areas for components to be integrated in said well, being carried out after said step of forming said at least one dielectric trench.