Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
AssigneeSpinnaker Semiconductor, Inc.
InventorsJohn P. Snyder, John M. Larson
Life of this patent
Estimating the term…
Abstract
The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface scattering, which enables the strained substrate to provide improved power and speed performance characteristics in this device, as compared to conventional devices.
Claims35
A device for regulating the flow of electric current, the device comprising:
- a strained semiconductor substrate;
- a gate electrode on the strained semiconductor substrate;
- and
- a source electrode and a drain electrode in contact with the strained semiconductor substrate, at least one of the source electrode and the drain electrode forming a Schottky or Schottky-like contact with the strained semiconductor substrate, the source and the drain separated by a channel.
A method of manufacturing a device for regulating the flow of electric current, the method comprising:
- providing a strained semiconductor substrate;
- providing a gate electrode on the strained semiconductor substrate;
- and
- providing a source electrode and a drain electrode in contact with the strained semiconductor substrate, at least one of the source electrode and the drain electrode forming a Schottky or Schottky-like contact with the strained semiconductor substrate, the source and the drain separated by a channel.
Dependencies are inferred from the claim text.