Method for fabricating a thin film transistor

A method of fabricating a thin film transistor for a liquid crystal display having a plurality of pixels comprising:

• forming a first amorphous silicon layer as an active layer on a glass substrate;
• forming a gate insulating layer and a second amorphous silicon layer as a gate electrode on the first amorphous silicon layer;
• doping impurities of a first conductive type in the first and second amorphous silicon layers;
• forming a metal layer on doped portions of the first and second amorphous silicon layers;
• and
• crystallizing the first and second amorphous silicon layers by performing heat treatment and applying an electric field on the resultant substrate,
• wherein the thin film transistor includes source and drain regions and a channel region, and wherein the first amorphous silicon layers in the source and drain regions are crystallized by MIC and the first amorphous silicon layer in the channel region is crystallized by FALC during the application of the thermal treatment and electric field, whereby the first crystallized silicon layer in the channel region is substantially free from metal atoms of the metal layer.

A method of fabricating a thin film transistor for a liquid crystal display having a plurality of pixels comprising:

• forming an amorphous silicon layer as an active layer on a glass substrate;
• forming a gate insulating layer and a gate electrode on the amorphous silicon layer;
• forming a metal layer on exposed portions of the amorphous silicon layer;
• doping impurities of a first conductive type in the amorphous silicon layer after the metal layer is formed;
• and
• crystallizing the amorphous silicon layer by applying thermal treatment and an electric field to the resultant substrate,
• wherein the thin film transistor includes source and drain regions and a channel region, and wherein the amorphous silicon layers in the source and drain regions are crystallized by MIC and the amorphous silicon layer in the channel region is crystallized by FALC during the application of the thermal treatment and electric field, whereby the crystallized silicon layer in the channel region is substantially free from metal atoms of the metal layer.

A method of fabricating a thin film transistor for a liquid crystal display having a plurality of pixels comprising:

• forming an amorphous silicon layer as an active layer on a glass substrate;
• forming a gate insulating layer and a gate electrode on the amorphous silicon layer;
• doping impurities of a first conductive type in the amorphous silicon layer;
• forming a metal layer on exposed portions of the amorphous silicon layer;
• and
• crystallizing the amorphous silicon layer by applying thermal treatment and an electric field to the resultant substrate,
• wherein the thin film transistor includes source and drain regions and a channel region, and wherein the amorphous silicon layers in the source and drain regions are crystallized by MIC and the amorphous silicon layer in the channel region is crystallized by FALC during the application of the thermal treatment and electric field, whereby the crystallized silicon layer in the channel region is substantially free from metal atoms of the metal layer.