Active matrix organic light emitting display and method of forming the same
AssigneeAu Optronics Corporation
InventorsHsin-Hung Lee, Chih-Feng Sung
Life of this patent
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Abstract
An active matrix organic light emitting display (AM-OLED) and a method of forming the same. The AM-OLED has a plurality of pixel areas arranged in a matrix form. Each pixel area has at least two amorphous silicon TFTs, a display area and a light-shielding layer. The amorphous silicon TFT has an amorphous silicon layer serving as a channel region. The display area is formed by a transparent-conductive layer. The light-shielding layer covers at least the amorphous silicon layer of the amorphous silicon TFT and exposes the display area.
Claims11
A method of fanning an active matrix organic light emitting display (AM-OLED), comprising:
- providing a transparent substrate;
- forming a first metal layer on the transparent substrate and then patterning the first metal layer as a first scanning line extending along a X direction, a second scanning line extending along the X direction and an bottom electrode of a capacitor, wherein the bottom electrode of the capacitor is between the two scanning lines;
- forming a first insulating layer on the entire surface of the transparent substrate;
- forming an island structure on a predetermined TFT area over the first scanning line, wherein the island structure comprises a second insulating layer deposited on the first insulating layer and an amorphous silicon layer deposited on the second insulating layer;
- forming an etching stopper on the top of the island structure to cover a predetermined gate electrode of the predetermined TFT;
- forming a doped armorphous silicon layer and a second metal layer on the island structure in sequence;
- patterning the second metal layer as a data line extending in a Y direction and an upper electrode of the capacitor, and forming an opening on the island structure to separate the second metal layer as a source/drain electrode and separate the doped amorphous silicon layer as a source/drain diffusion region;
- forming a protection layer on the entire surface of the transparent substrate, an forming a first via and a second via, wherein the first via exposes one end of the second scanning line and the second via exposes one end of the upper electrode of the capacitor;
- forming a transparent-conductive layer on the entire surface of the transparent substrate, and then patterning the transparent-conductive layer as a display area and two electrical-connecting areas that cover the exposed areas of the first via and the second via;
- and
- forming a light-shielding layer on the entire surface of the transparent substrate, wherein the light-shielding layer covers at least the amorphous silicon layer of the predetermined TFT and exposes the display area.
Dependencies are inferred from the claim text.