Laser illumination system
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Koichiro Tanaka
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Abstract
The illumination energy of an excimer laser is measured and adjusted to always effect illumination at constant energy. A laser beam output from an optics is reflected by a mirror, and applied to a sample. A beam profiler is disposed behind the mirror to measure the energy of an illumination laser beam. An energy attenuating device disposed between another mirror and the optics is operated based on the measurement value so that the energy of the laser beam applied to the sample is kept constant.
Claims37
A method for forming a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- providing a linear laser light;
- reflecting a part of said linear laser light by a mirror;
- measuring an energy of said linear laser light;
- sliding said mirror along said linear laser light;
- irradiating said linear laser light to said semiconductor film.
A method for forming a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- providing a linear laser light;
- reflecting a part of said linear laser light by a mirror;
- measuring an energy of said linear laser light;
- sliding said mirror along said linear laser light;
- irradiating said linear laser light to said semiconductor film while measuring an energy of an end portion of said linear laser light.
A method for forming a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- providing a linear laser light;
- reflecting a part of said linear laser light by a mirror;
- measuring an energy of said linear laser light;
- sliding said mirror along said linear laser light;
- irradiating said linear laser light to said semiconductor film,
- wherein said mirror is provided outside said linear laser light during the irradiation of said linear laser light.
A method for forming a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- separating a first linear laser light into a second linear laser light and a third linear laser light;
- introducing said second linear laser light into a beam profiler;
- scanning said beam profiler in a direction parallel with said second linear laser light;
- and
- irradiating said third linear laser light to said semiconductor film.
A method for forming a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- separating a first linear laser light into a second linear laser light and a third linear laser light;
- introducing said second linear laser light into an energy measuring device;
- scanning said energy measuring device in a direction parallel with said second linear laser light;
- and
- irradiating said third linear laser light to said semiconductor film.
A method for forming a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- separating a first linear laser light into a second linear laser light and a third linear laser light;
- introducing said second linear laser light into a beam profiler;
- scanning said beam profiler in a direction parallel with said second linear laser light;
- and
- irradiating said third linear laser light to said semiconductor film while measuring an energy of an end portion of said third linear laser light.
A method for forming a semiconductor device comprising:
- forming a semiconductor film comprising silicon over a substrate;
- separating a first linear laser light into a second linear laser light and a third linear laser light;
- introducing said second linear laser light into an energy measuring device;
- scanning said energy measuring device in a direction parallel with said second linear laser light;
- and
- irradiating said third linear laser light to said semiconductor film while measuring an energy of an end portion of said third linear laser light.
Dependencies are inferred from the claim text.