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US 6,784,029 B1Granted
Bi-directional ESD protection structure for BiCMOS technology
AssigneeNational Semiconductor Corporation
InventorsVladislav Vashchenko, Ann Concannon, Peter J. Hopper, Marcel ter Beek
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Abstract
In a Bi-CMOS ESD protection device, dual voltage capabilities are achieved by providing two laterally spaced p-regions in a n-material and defining a n+ region and a p+ region in each of the p-regions to define I-V characteristics that are similar to those defined by a SCR device in a positive direction, but, in this case, having those characteristics in both directions. The device may be asymmetrical to accommodate different voltage amplitudes in the positive and negative directions.
Claims4
A method of forming a bi-directional ESD protection device, comprising
- providing a semiconductor substrate, n-doping at least part of the semiconductor substrate to form n-material,
- masking and doping the n-material to define a first and a second p-region in the n-material that are laterally spaced from each other,
- forming a n+ region and a p+ region laterally spaced from each other, in each of the two p-regions, and
- providing a common contact for the n+ region and p+ region of the one p-region, and a common contact for the n+ region and p+ region of the other p-region, wherein the first p-region has a different doping level from the second p-region to define an asymmetrical structure.
1 more element
Dependencies are inferred from the claim text.