Back to results
US 6,784,026 B2Granted
Microelectronic die including low RC under-layer interconnects
AssigneeMicron Technology, Inc.
InventorJay S. Parks
Life of this patent
Estimating the term…
Abstract
A microelectronic die comprises a first area, a second area and an under-layer of conductive material formed in the second area to interconnect components. A method of making a microelectronic die comprises forming a layer of insulative material on a substrate; forming at least one trench in the layer of insulative material; and forming at least one line of conductive material in each of the at least one trenches to transmit signals.
Claims24
A method of making a microelectronic die, comprising:
- forming a layer of insulative material on a substrate;
- forming at least one trench in the layer of insulative material spaced above the substrate and extending from proximate one edge of the microelectronic die to proximate another edge of the microelectronic die;
- and
- forming at least one line of conductive material in each of the trenches encompassed by the insulative material to transmit signals across the microelectronic die.
1 more element
A method of making a microelectronic die, comprising:
- forming a layer of insulative material on a substrate;
- forming at least one device in a first area of the layer of insulative material;
- and
- forming an under-layer of conductive material in a second area spaced above the substrate and encompassed by the insulative layer.
1 more element
A method of forming a microelectronic die, comprising:
- forming a layer of insulative material on a substrate;
- forming at least one device in a first area of the layer of insulative material;
- forming a trench in a second area of the layer of insulative material spaced above the substrate and extending substantially across the microelectronic die;
- and
- forming a line of metallization in the trench encompassed by the insulative material to transmit signals across the microelectronic die.
2 more elements
A method of making a microelectronic die, comprising:
- forming a layer of insulative material on a substrate;
- forming an array of memory cells in a first area of the layer of insulative material;
- forming a trench in a second area of the layer of insulative material spaced above the substrate;
- forming a first component in a third area of the layer of insulative material;
- forming a second component in the third area of the layer of insulative material;
- and
- forming a line of metallization in the trench encompassed by the insulated material to transmit signals between the first component and the second component.
4 more elements
A method of making a microelectronic die, comprising:
- forming a layer of insulative material on a substrate;
- forming a device in a first area of the layer of insulative material;
- forming a plurality of trenches in a second area of the layer of insulative material spaced above the substrate;
- forming a plurality of components in a third area of the layer of insulative material;
- and
- forming a line of metallization in each of the trenches encompassed by the insulative material to transmit signals between the plurality of components.
3 more elements
A method of making a memory, comprising:
- forming a layer of insulative material on a substrate;
- forming an array of memory cells in a first area of the layer of insulative material;
- and
- forming an under-layer of conductive material in a second area spaced above the substrate and encompassed by the insulative layer.
1 more element
A method of making a memory, comprising:
- forming a layer of insulative material on a substrate;
- forming an array of memory cells in a first area of the layer of insulative material;
- forming at least one trench in a second area of the layer of insulative material spaced above the substrate and extending substantially completely along one dimension of the memory;
- and
- forming at least one line of conductive material in each of the at least one trenches encompassed by the insulative material to transmit signals across the memory.
2 more elements
A method of making an electronic system, comprising:
- forming a processor;
- and
- forming a memory system coupled to the processor, wherein forming the memory system includes:
- forming a layer of insulative material on a substrate;
- forming an array of memory cells in a first area of the layer of insulative material;
- and
- forming an under-layer of conductive material in a second area spaced above the substrate and encompassed by the insulative layer.
4 more elements
A method of making an electronic system, comprising:
- forming a processor;
- and
- forming a memory system coupled to the processor, wherein forming the memory system includes:
- forming a layer of insulative material on a substrate;
- forming an array of memory cells in a first area of the layer of insulative material;
- forming at least one trench in a second area of the layer of insulative material spaced above the substrate and extending substantially completely along one dimension of the memory;
- and
- forming at least one line of conductive material in each of the at least one trenches encompassed by the insulative material to transmit signals across the memory.
5 more elements
Dependencies are inferred from the claim text.