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US 6,784,022 B2Granted
Method of dicing a semiconductor wafer and heat sink into individual semiconductor integrated circuits
AssigneeTexas Instruments Incorporated
InventorsNorito Umehara, Masazumi Amagai
Life of this patent
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Abstract
A method of producing semiconductor devices including the steps of providing a semiconductor wafer of substantially uniform thickness 22, providing a heat-radiating plate 22, and attaching the heat-radiating plate 20 to the semiconductor wafer. The assembled wafer and heat-radiating plate are diced into individual semiconductor integrated circuits having individual heat radiating plates attached thereto.
Claims17
A method of producing semiconductor devices, comprising the steps of:
- providing a semiconductor wafer of substantially uniform thickness having a bottom surface and comprising a plurality of individual integrated circuits, each individual integrated circuit having a principal surface opposite said bottom surface and defining a plurality of electrode pads;
- providing a heat-radiating plate having an attaching surface and an exposed surface;
- attaching said attaching surface of said heat-radiating plate to said bottom surface of said semiconductor wafer;
- dicing said semiconductor wafer with said attached heat-radiating plate into individual semiconductor integrated circuits having individual heat radiating plates attached thereto, said heat radiating plates being the same size as said individual integrated circuits;
- extending a lead frame over said principal surface and toward said plurality of electrode pads of one of said semiconductor integrated circuits;
- and
- attaching said lead frame to said plurality of electrode pads on said principal surface of one of said semiconductor integrated circuits.
4 more elements
A method of producing semiconductor devices, comprising the steps of:
- providing a heal-radiating plate having an attaching surface and an exposed surface;
- forming an adhesive layer on said attaching surface of said heat-radiating plate;
- mounting the bottom surface of a semiconductor wafer containing a plurality of integrated circuits on said adhesive layer to form an assembly of said wafer and said heat-radiating plate;
- dividing said assembly of said wafer and said heat-radiating plate into individual semiconductor chips each of which includes an integrated circuit attached to a corresponding portion of said heat-radiating plate and each one of said plurality of integrated circuits having a principal surface defining a plurality of electrode pads;
- and
- extending a lead frame over said principal surface and toward said electrode pads of one of said integrated circuits;
- and
- attaching said lead frame to said plurality of electrode pads on said principal surface of one of said semiconductor chips.
5 more elements
Dependencies are inferred from the claim text.