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US 6,784,004 B2Granted
Method of determining post-etch offset in exposed-to-embedded overlay
AssigneeIntel Corporation
InventorAlan Wong
Life of this patent
Estimating the term…
Abstract
The present invention describes a structure for and a method of forming a first set and a second set of features in a substrate; covering the first and second set of features with a material; forming a third set of features in the material and removing the material to expose the first set of features, leaving the second set of features embedded below the material; measuring post-etch overlay between the first set and the third set of features; and measuring post-develop overlay between the second set and the third set of features.
Claims8
A method comprising:
- forming a first set and a second set of features in a substrate;
- covering said first and second set of features with material;
- forming a third set of features in said material and removing said material to expose said first set of features, leaving said second set of features embedded below said material;
- measuring post-etch overlay between said first set and said third set of features;
- and
- measuring post-develop overlay between said second set and said third set of features.
3 more elements
A method comprising:
- determining centerline of a first set of features formed in a substrate and not covered with a material;
- determining centerline of a second set of features formed in said substrate and covered with said material, said second set and said first set of features being formed together in said substrate;
- determining centerline of a third set of features formed in said material;
- determining overlay of said third set to said first set of features;
- and
- determining overlay of said third set to said second set of features.
3 more elements
Dependencies are inferred from the claim text.