Conductive thin film, a capacitor using the same and a method of manufacturing thereof

A method of manufacturing a capacitor comprising the steps:

• forming an electrode which is composed by using a material containing a noble metal and is located on at least one side of a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material;
• and
• performing a patterning of the electrode by dry-etching with chlorine gas, wherein rhenium (Re) is added to the material of the electrode before the etching such that the reactivity of the noble metal is increased and no formation of side walls occurs.

A method of manufacturing a semiconductor device comprising the steps:

• locating a conductive thin film on a semiconductor substrate;
• and
• performing a patterning of the conductive thin film by dry-etching with fluorine gas, wherein the thin film is made by using a noble metal containing rhenium (Re) such that the reactivity of the noble metal is increased and no formation of side walls occurs.

A method of manufacturing a semiconductor device comprising the steps:

• locating a conductive thin film on a semiconductor substrate;
• and
• performing a patterning of the conductive thin film by dry-etching with chlorine gas, wherein the thin film is made by using a noble metal containing rhenium (Re) the reactivity of the noble metal is increased and no formation of side walls occurs.

A method of manufacturing a capacitor comprising the steps:

• forming an electrode which is composed by using a material containing a noble metal and is located on at least one side of a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material;
• and
• performing a patterning of the electrode by dry-etching with halogen gas, wherein rhenium (Re) is added to the material of the electrode before the etching such that the reactivity of the noble metal is increased and no formation of side walls occurs.

A method of manufacturing a semiconductor device comprising the steps:

• locating a conductive thin film on a semiconductor substrate;
• and
• performing a patterning of the conductive thin film by dry-etching by the reaction with halogen gas or halogen compound, wherein the thin film is made by using a noble metal containing rhenium (Re) such that the reaction of the noble metal is increased and no formation of side walls occurs.

A method of manufacturing a capacitor comprising the steps of:

• forming an electrode which is composed by using a material containing a noble metal and is located on at least one side of a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material;
• and
• performing a patterning of the electrode by dry-etching by a reaction with fluorine, wherein rhenium (Re) is added to the material of the electrode before the etching and forms a composition having a low boiling point by the reaction with fluorine such that the reactivity of the noble metal is increased and no formation of side walls occurs.

A method of manufacturing a capacitor comprising the steps of:

• forming an electrode which is composed by using a material containing a noble metal and is located on at least one side of a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material;
• and
• performing a patterning of the electrode by dry-etching by a reaction with chlorine gas or chloride gas, wherein rhenium (Re) is added to the material of the electrode before the etching and forms a composition having a low boiling point by the reaction with chlorine of chloride gas such that the reactivity of the noble metal is increased and no formation of side walls occurs.

A method of manufacturing a capacitor comprising the steps of:

• forming an electrode which is composed by using a material containing a noble metal and is located on at least one side of a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material;
• and
• performing a patterning of the electrode by dry-etching by a reaction with halogen gas or halogen compound gas, wherein rhenium (Re) is added to the material of the electrode before the etching and which forms a composition having a low boiling point by the reaction with halogen gas or halogen compound gas such that the reactivity of the noble metal is increased and no formation of side walls occurs.