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US 6,783,997 B2Granted
Gate structure and method
AssigneeTexas Instruments Incorporated
InventorsAntonio L. P. Rotondaro, Mark R. Visokay, Luigi Colombo
Life of this patent
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Abstract
MOSFET fabrication methods with high-k gate dielectrics for silicon or metal gates with gate dielectric deposition control including TXRF. TXRF permits analysis of gate (or capacitor) high-k dielectrics down to about 5 nm thickness.
Claims4
A method of dielectric layer fabrication, comprising:
- (a) forming a first dielectric layer on a first semiconductor substrate, said dielectric layer including MwSixOyNz with M a metal selected from the group consisting of Hf, Zr, La, Gd, Pr, Y, and mixtures thereof;
- (b) analyzing said dielectric layer with total reflection x-ray fluorescence;
- and
- (c) using the results of step (b) to adjust conditions of step (a) for formation of a second dielectric layer on a second semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.