Method of fabricating a self-aligned magnetic tunneling junction and via contact
AssigneeFreescale Semiconductor, Inc.
InventorsNicholas D. Rizzo, Kelly W. Kyler, Gregory W. Grynkewich
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Abstract
A method of fabricating a magnetoresistive random access memory device comprising the steps of providing a substrate, forming a first conductive layer positioned on the substrate, forming a conductive material stack region with a flat surface, the conductive material stack region being positioned on a portion of the first conductive layer, and forming a magnetoresistive random access memory device positioned on the flat surface of the conductive material stack region, the magnetoresistive random access memory device being isolated from the first conductive layer and subsequent layers grown thereon.
Claims8
A method of fabricating a magnetoresistive random access memory device comprising the steps of:
- providing a substrate;
- forming a first conductive layer positioned on the substrate;
- depositing a second conductive layer positioned on a portion of the first conductive layer, the second conductive layer having a top surface and a bottom surface wherein the bottom surface is positioned on the first conductive layer and wherein the bottom surface has a bottom width and the top surface has a top width;
- depositing a third conductive layer positioned on the top surface of the second conductive layer;
- etching the second conductive layer to form an undercut gap beneath the third conductive layer;
- and
- forming a magnetoresistive random access memory device positioned on the third conductive layer, the magnetoresistive random access memory device being isolated from the first conductive layer and subsequent layers grown thereon.
Dependencies are inferred from the claim text.