Electron beam exposure method using variable backward scattering coefficient and computer-readable recording medium having thereof
AssigneeSamsung Electronics Co., Ltd.
InventorSeung-hune Yang
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AssigneeSamsung Electronics Co., Ltd.
InventorSeung-hune Yang
Estimating the term…
An electron beam exposure method is disclosed. First, An exposure region is divided into a plurality of grating regions. A pattern density is obtained for one of the plurality of grating regions. A backward scattering coefficient is determined in accordance with the pattern density for the one of the plurality of grating regions. An exposure dose amount is calculated from the backward scattering coefficient. The one of the plurality of grating regions is exposed with the calculated exposure dose amount. The backward scattering coefficient is provided with a variable function proportional to the pattern density. The backward scattering coefficient η is provided with a variable value depending on the pattern density and location of the one of the plurality of grating regions.
An electron beam exposure method, comprising the steps of:
An electron beam exposure method, comprising the steps of:
A recording medium having stored modules with instructions executable by a computer to perform a corrected electron beam exposure, the recording medium comprising:
A recording medium having stored programs executable by a computer for performing a corrected electron beam exposure, the recording medium comprising:
Dependencies are inferred from the claim text.