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AssigneeCorning Incorporated
InventorsGeorge Edward Berkey, Lisa Anne Moore, Charles Chunzhe Yu
Estimating the term…
The invention includes methods of making lithography photomask blanks. The invention also includes lithography photomask blanks and preforms for producing lithography photomask. The method of making a lithography photomask blank includes providing a soot deposition surface, producing SiO2 soot particles and projecting the SiO2 soot particles toward the soot deposition surface. The method includes successively depositing layers of the SiO2 soot particle on the deposition surface to form a coherent SiO2 porous glass preform body comprised of successive layers of the SiO2 soot particles and dehydrating the coherent SiO2 glass preform body to remove OH from the preform body. The SiO2 is exposed to and reacted with a fluorine containing compound and consolidated into a nonporous silicon oxyfluoride glass body with parallel layers of striae. The method further includes forming the consolidated silicon oxyfluoride glass body into a photomask blank having a planar surface with the orientation of the striae layer parallel to the photomask blank planar surface.
A method of making a lithography photomask blank, comprising the steps of:
A method of making a lithography photomask blank having a photomask blank large dimension L and a photomask blank thickness T comprising the steps of:
A method as claimed in 29, wherein said silicon oxyfluoride glass consists essentially of Si, O, and F.
A method as claimed in 29, wherein said silicon oxyfluoride glass has an OH content ≦10 ppm and a F wt. % of at least 0.5 wt. %.
A method of making a lithography photomask blank having a photomask blank large dimension L and a photomask blank thickness T comprising the steps of:
A method as claimed in 40, wherein said silicon oxyfluoride glass consists essentially of Si, O, and F.
A glass lithography mask blank consolidated preform comprising a silicon oxyfluoride glass column having an OH content ≦10 ppm, a F wt. % concentration ≧0.5 wt. %, said silicon oxyfluoride glass column having less than 1×1017 H2 molecules/cm3.
A mask blank preform as claimed in 49, wherein said silicon oxyfluoride glass has a molecular H2 content of less than 5×1016 molecules/cm3.
A mask blank preform as claimed in 49, wherein said silicon oxyfluoride glass has a chlorine content less than 10 ppm.
A glass lithography mask blank consolidated preform for forming a lithography mask blank having a mask blank large dimension L and a mask blank thickness T, said mask blank preform comprising a silicon oxyfluoride glass column having less than 1×1017 H2 molecules/cm3 and a column height CH and a column diameter CD, wherein (CD)2CH≧L2T.
A glass lithography mask blank consolidated preform for forming a lithography mask blank having a mask blank large dimension L and a mask blank thickness T, said mask blank preform comprising a silicon oxyfluoride glass column having less than 1×1017 H2 molecules/cm3 and said glass column having a column height CH and a column radius CR wherein CR≧L/2 and CH≧T.
A lithography photomask blank comprising a flat planar silicon oxyfluoride glass member having a top planar surface and a bottom planar surface, said planar silicon oxyfluoride glass member having an OH content ≦10 ppm, a F wt. % concentration ≧0.5 wt. %, said silicon oxyfluoride glass having less than 1×1017 H2 molecules/cm3 and said top planar surface has a surface roughness ≦0.15 nm rms.
Dependencies are inferred from the claim text.