Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same

A method of manufacturing a member for a semi conductor device, in which a conductor layer consisting essentially of copper is bonded to an aluminum nitride substrate material, the method comprising the steps of:

• coating a sintered aluminum nitride substrate material with a paste comprising at least one high melting point metal selected from the group consisting of W, Mo, Ta, Ti and Zr and a glass frit, and firing said paste to form a high melting point metallizing layer consisting essentially of not less 80 volume % of the high melting point metal and not greater than 20 volume % of the glass frit;
• forming an intervening metal layer which has a melting point of not greater than 1,000° C. and consists of at least one selected from the group consisting of Ni, Cu and Fe or a member selected from the group consisting of nickel-phosphorous, nickel-boron, copper-zinc and copper-phosphorous, on either or both of said high melting point metallizing layer and a conductor layer consisting essentially of copper;
• and
• bonding said aluminum nitride substrate material to said conductor layer consisting essentially of copper as a circuit layer via said intervening metal layer at a temperature of less than the melting point of said conductor layer, without forming an intervening solder layer, wherein said intervening metal layer is 2-40 μm thickness.

A method of manufacturing a member for a semiconductor device, in which a conductor layer consisting essentially of copper is bonded to an aluminum nitride substrate material, the method comprising the steps of:

• coating a compact comprising an aluminum nitride material powder with a paste comprising at least one high melting point metal selected from the group consisting of W, Mo, Ta, Ti and Zr and a glass frit, and then firing the body to obtain an aluminum nitride substrate material, the same time, form a high melting point metallizing layer consisting essentially of not less than 80 volume % of the high melting point metal and not greater than 20 volume % of the glass frit;
• forming an intervening metal layer which has a melting point of not greater than 1,000° C. and consists essentially of one selected from the group consisting of Ni, Cu and Fe, or a member selected from the group consisting of nickel-phosphorous, nickel-boron, copper-zinc and copper-phosphorous, on either or both of said high melting point metallizing layer and a conductor layer consisting essentially of copper;
• and
• bonding said aluminum nitride substrate material to said conductor layer consisting essentially of copper as a circuit layer via said intervening metal layer at a temperature of less than the melting point of said conductor layer, without forming an intervening solder layer, wherein said intervening metal layer is 2-40 μm in thickness.