Film deposition method
AssigneeSony Corporation
InventorsMinehiro Tonosaki, Koji Kitagawa
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Abstract
A film deposition method, which can form a high quality functional thin film excellent in various physical properties on a surface such as a plastic substrate, is provided. A carbon precursor film is formed on the surface of the substrate K with carbon ions (N2A) using a processing source (4) (a FCVA ion source) with no voltage applied to the substrate K, and then carbon ions (N2B) are implanted in the carbon precursor film with a pulsed voltage containing a negative pulse voltage of −15 kV or less applied to the substrate K, in order to form the carbon thin film. The quality of the carbon precursor film is improved and the various physical properties of the carbon thin film can be controlled.
Claims8
A film deposition method for forming a carbon thin film on a surface of a processing object, comprising:
- a first step of generating first carbon ions and forming a carbon precursor film on the surface of the processing object with the first carbon ions, with no voltage applied to the processing object;
- and
- a second step of generating second carbon ions and implanting the second carbon ions in the carbon precursor film, with a pulsed voltage containing a negative pulse voltage applied to the processing object,
- wherein both of the first carbon ions and the second carbon ions are generated by evaporating a cathode containing carbon using energy of arc discharges.
Dependencies are inferred from the claim text.