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US 6,783,591 B1Granted
Laser thermal annealing method for high dielectric constant gate oxide films
AssigneeAdvanced Micro Devices, Inc.
InventorsArvind Halliyal, Nicholas H. Tripsas, Mark T. Ramsbey
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Abstract
A method of manufacturing a semiconductor device, including depositing a gate oxide film over a substrate and conditioning the deposited gate oxide film using laser thermal annealing in a single process chamber, and depositing a gate electrode film over the conditioned gate oxide film.
Claims15
A method of manufacturing a semiconductor device, comprising:
- depositing a gate oxide film over a substrate and conditioning the deposited gate oxide film using laser thermal annealing in a single process chamber;
- and
- depositing a gate electrode film over the conditioned gate oxide film.
Dependencies are inferred from the claim text.