Diamondoid-containing materials in microelectronics
AssigneeChevron U.S.A. Inc.
InventorsJeremy E. Dahl, Robert M. Carlson, Shenggao Liu
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AssigneeChevron U.S.A. Inc.
InventorsJeremy E. Dahl, Robert M. Carlson, Shenggao Liu
Estimating the term…
Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.
A method of nucleating the growth of a diamond film, wherein the film is nucleated with at least one higher diamondoid.
A method of nucleating the growth of a diamond film, the method comprising the steps of:
A diamond film nucleated by at least one higher diamondoid.
A diamond film nucleated by the steps comprising:
Dependencies are inferred from the claim text.