Membrane pressure sensor containing silicon carbide and method of manufacture
AssigneeCommissariat a l'Energie Atomique
InventorsJean-Fréderic Clerc, Claude Jaussaud, Jean-Pierre Joly, Jean Therme
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AssigneeCommissariat a l'Energie Atomique
InventorsJean-Fréderic Clerc, Claude Jaussaud, Jean-Pierre Joly, Jean Therme
Estimating the term…
The invention concerns a pressure sensor (1), able to operate at high temperature and measure the pressure of a hostile medium, comprising: a sensing element (4) integrating a membrane (8) in monocrystalline silicon carbide, made by micro-machining a substrate in polycrystalline silicon carbide, a first surface of membrane (8) intended to contact said medium, a second surface of membrane (8) comprising membrane deformation detection means (9) connected to electric contacts (10) to connect electric connection means (11), the surfaces of sensing element (4) contacting said medium being chemically inert to this medium; a carrier (5) to support sensing element (4) so that said first surface of membrane (8) may be contacted with said medium and the second surface of membrane (8) may be shielded from said medium, carrier (5) being in polycrystalline silicon carbide; a seal strip (6), in material containing silicon carbide, brazed between carrier (5) and sensing element (4) to protect the second surface of membrane (8) from any contact with said medium.
Manufacturing method by micro-machining at least one membrane sensing element for a pressure sensor able to operate at high temperature and to measure the pressure of a hostile medium, comprising the following steps:
Method according to clam 1, further comprising depositing an insulating interface layer on the surface of the substrate containing polycrystalline silicon carbide prior to producing said layer of monocrystalline silicon carbide thereon.
Dependencies are inferred from the claim text.