Plasma deposition device for forming thin film

#The present invention relates to a plasma deposition device for forming a thin film, especially a plasma deposition device for forming a film functioning as a semiconductor. More specifically, the present invention relates to a plasma deposition device for forming a thin film preferably utilizing a plasma-excited chemical vapor deposition method utilized for manufacturing an insulation film or a semiconductor film such as amorphous silicon (hereinafter referred to as a-Si) utilized in the electronic industry.

#The method for manufacturing an electronic device such as an integrated circuit, a liquid crystal display, an amorphous solar battery and the like by depositing a semiconductor film and the like using plasma is called a plasma-excited chemical vapor deposition (CVD) method, which is advantageous in its simplicity and its maneuverability and is applied to manufacture various electronic devices.

#The general CVD method will now be explained, with reference to FIGS. 8 and 9 showing the structure of a plasma deposition device (plasma CVD device) utilizing this general CVD method. FIG. 8 is a cross-sectional view explaining the concept of the structure of the plasma CVD device, and FIG. 9 is a perspective view showing the structure of the main portion of the device.

#FIG. 1 is a cross-sectional view showing the outline of the structure of a plasma deposition device according to the present invention;

#FIG. 2 is a perspective view showing the structure of the main portion of the plasma deposition device according to the present invention;

#FIG. 3 is a simplified view explaining the method for providing electric energy to the plasma deposition device shown in FIG. 1;

#The structure of the plasma deposition device according to the present invention will now be explained with reference to FIGS. 1 through 7.

#FIG. 1 is a cross-sectional view showing the outline of the plasma deposition device according to the first embodiment of the invention, and FIG. 2 is a perspective view showing the structure of the main portion of the device shown in FIG. 1.

#The plasma deposition device 1 according to the present invention comprises, as shown in FIGS. 1 and 2, an electrode substrate 11, a plurality of electrodes 13 formed adjacent to one another in a striped form on the first surface of the electrode substrate 11, a gap supply space 15 formed to the back side of the electrode substrate 11, a deposition substrate 30 opposed to the electrodes 13 from a predetermined distance d, a vacuum container 50, an induction terminal 51, a deposition substrate holder 52, a power source 60, and a gas supply unit 70. Gas introducing holes 12 are arranged between the electrodes 13 that are mounted adjacent to each other on the electrode substrate 11. The power source 60 supplies high-frequency output providing electric energy to each electrode 13. The gas supply unit 70 is connected to the gas supply space 15 via a gas supply tube 16, through which the film forming material gas is supplied during deposition.