Multilayered copper structure for improving adhesion property
AssigneeSimplus Systems Corporation
InventorTue Nguyen
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Abstract
A multilayered copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayered copper structure comprises a thin high-resistive copper layer to provide improved adhesion to the underlying diffusion barrier layer, and a low-resistive copper layer to carry the electrical current with minimum electrical resistance. The invention also provides a method to form the multilayered copper structure.
Claims22
A method to form a multilayered copper structure for improving adhesion to an underlying diffusion barrier layer, the method comprising the steps of:
- a) Forming a thin high-resistive copper layer, whereby this high-resistive layer serves to improve the adhesion of copper to the underlying diffusion barrier layer;
- b) Treating the thin high-resitive copper layer to reduce the resistance of the thin high-resistive copper layer, whereby the treatment step improves the conductivity of the high-resistive copper layer without destroying the adhesion property;
- and
- c) Forming a low-resistive copper layer, in which the resistivity of the low-resistive layer is lower than the resistivity of the treated high-resistive layer, whereby this layer serves to carry the electrical current with minimum electrical resistance.
Dependencies are inferred from the claim text.