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AssigneeHitachi, Ltd.
InventorsToshihide Nabatame, Takaaki Suzuki, Kazutoshi Higashiyama, Tomoji Oishi
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A ferroelectric element having a high Pr and a low Ec and having a good withstand voltage, which is in the form of a thin film using a ferroelectric layer containing insulating particles, is provided. The ferroelectric layer containing the insulating particles is effective to suppress leakage current caused through grain boundaries of crystals, and hence to exhibit a high Pr and a low Ec and a good withstand voltage. The ferroelectric element has a structure in which such a ferroelectric layer in the form of a thin film is sandwiched between electrodes. By incorporating the ferroelectric element in a field effect transistor structure, it is possible to realize a highly integrated semiconductor device for detecting reading or writing.
A dielectric element comprising an upper electrode, a dielectric thin film, and a lower electrode, wherein said dielectric thin film contains insulating particles having a resistance not smaller than 106 Ω, wherein said dielectric thin film comprises at least one of a ferroelectric thin film and a high dielectric thin film and wherein said ferroelectric thin film has a c-axis with an orientation that is tilted 45° to an electrode plane and has a degree of orientation that is at least 90%.
Dependencies are inferred from the claim text.